场效应晶体管-上海晶岳电子有限公司

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Part No.	Configuration	BVDSS(V)	VGSS(V)	ID(A)	VTH(V)	RDSON Typ（mR@10V/4.5V/2.5V）	Package	Down
		(V) (Max.)	(V) (Typ.)	(A) (MAX.)	(V) (Typ.)	(pF) (Typ.)
SSC8030GN4	N	30.00	±20	35.00	1.5	8	10		PDFN3.3X3.3
SSC2500GS9	N	20.00	±8	1.00	0.7		216	260	SOT723
SSC2500GN1	N	20.00	±8	1.10	0.68	195	240	305	DFN1006
SSC138GS6	N	50.00	±20	0.20			2.5	5.6	SOT23
SSC8034GSB	N	30.00	±12	7.00	1	18	20	30	SOT23-6
SSC7002KGS6	N	60.00	±20	0.30	1.5	2	3		SOT23
SSC8080GT8	N	80.00	±25	77.00	3	7.3			TO-252
SSC8132GS9	N	30.00	±20	0.50	1.0		550	680	SOT723
SSC8130GN6	N	30.00	±20	64.00	1.7	4	6		PDFN5X6
SSC8064GS6	N	60.00	±20	3.00	1.4	78	84		SOT23
SSC8037GN2	P	-30.00	±20	-11.00	-1.8	-14	22	DFN2x2-6L
SSC8140GN6	N-Channel Enhanced MOSFET	40.00	±20V	78.00		4mR@10V

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